The four achievements of the semiconductor institute won the 2017 national science and technology award

[China Instrument Network Instrument Development] On January 8, the National Science and Technology Award Conference was held in Beijing. The Institute of Semiconductors of the Chinese Academy of Sciences received a total of 4 awards, one for the National Natural Science Award, the second for the National Technological Invention Award, and the second for the National Science and Technology Progress Award.

The "Study of New Semiconductor Deep-Level Doping Mechanism" won the second prize of the National Natural Science Award. The project is mainly completed by: Li Jingbo, Gai Yanqin, Kang Jun, Li Shushen, Xia Jianbai. This project aims at the bandgap structure characteristics of wide bandgap semiconductor materials, two-dimensional semiconductor materials and semiconductor nanodevices, and systematically studies the doping mechanism and performance prediction of several important types of semiconductor materials and devices, and develops a basis for the first Principle The parallel computing method for large cells is applied to semiconductor doping systems to guide the p-type doping of third generation semiconductor materials such as GaN and ZnO, and the structural design of heterojunction devices, in order to improve the photocatalytic efficiency of TiO2 based materials. The preparation of spintronic devices in the future will provide theoretical guidance, which will provide important guidance for the research of doping mechanism and transport properties and device applications for new two-dimensional semiconductor materials.

The "Key Technology and Application of Fiber-optic Output High Power All Solid-state Lasers" won the second prize of the National Technology Invention Award. Projects mainly completed by: Lin Xuechun, Luo Hong, Lin Peichen, Li Da, Zhao Pengfei, Liu Yannan. After more than ten years of independent research and development, this project has achieved a series of innovative achievements in key technologies for high-power all-solid-state lasers for laser output, laser engineering, laser welding, and surface hardening, and the project has granted 56 patents for inventions. China's lack of core patents in the field of high-power all-solid-state lasers strongly supports the development of the industry. The results have been widely used in Beijing Benz and Chery Automobile and other automotive industries, and have enhanced the core competitiveness of domestic cars.

The “Key Technology and Application of Low-divergence-angle Semiconductor Photonic Crystal Lasers” won the second prize of the National Technology Invention Award. The project is mainly completed by: Zheng Yuhua, Qu Hongwei, Wang Yufei, Ma Changqin, Wang Hailing, Liu Anjin. The project has introduced a series of independent key technologies such as theoretical simulation methods, structural design, epitaxial material growth, process preparation, and package testing of semiconductor photonic crystal lasers by introducing photonic crystal structures into existing semiconductor laser epitaxial materials and device structures. The combined control of the electronic energy band and the photonic mode field enables the output beam direction and mode to be greatly improved while maintaining a high-efficiency output of the laser, and can be directly used without shaping, which greatly simplifies the optical system. The project publishes 80 SCI papers, authorizes 35 national invention patents and 3 software copyrights.

"Key technology and industrialization of optical network splitter chip and arrayed waveguide grating chip" won the second prize of National Science and Technology Progress Award. The project was mainly completed by: An Junming, Wu Yuanda, Hu Xiongwei, Hu Jiayan, Zhong Fei, Wang Hongjie, Zhang Jiashun, Wang Liangliang, Li Jianguang, Song Qionghui, Ling Jiuhong, Yin Xiaojie, and Wu Fan. After more than 10 years of painstaking research, the project team has made breakthroughs in the design, process, and industrialization of optical splitter chips and AWG chips, and designed and produced two series of 1×N and 2×N (up to 128 for N). More than 20 varieties of PLC optical splitter chips and AWG chips, built the largest optical splitter and AWG production line in the country, added sales of 701 million yuan in the latest three years, new profits of 85 million yuan, promote the application of new enterprises Increase sales by more than 5 billion and increase profits by 400 million yuan. The products are widely used in the construction of FTTH and optical transmission networks at home and abroad, breaking the monopoly of China's optical splitter chips to fill the domestic gap, and making important contributions to the smooth implementation of the "Broadband China Strategy."

It is reported that the National Science and Technology Awards are reviewed once a year, including the National Natural Science Award, the National Technology Invention Award, and the National Science and Technology Progress Award “Three Awards.” In addition, the People’s Republic of China International Scientific and Technological Cooperation Award granted to foreign scientists or foreign organizations is also included. , and the heaviest national highest science and technology award. According to the relevant provisions of the “Proposal on Deepening the Reform of Science and Technology Reward System” recently released in May 2017, the total number of awards for the three major awards does not exceed 300 per year.

(Original title: The four achievements of the semiconductor institute won the 2017 National Science and Technology Award)